LDMOS Power Amplifier for 23cm - 150 Watt Developers: US4ICI & US2IDR Specifications

• Model: PA-23cm-150W-N-female
• Based on MRFE6S9160HS transistor
• RF Range: 1260 - 1300 MHz
• P input TX < 6 Watt
• Pout = 150 Watt (JT65, FM)
• Pout = 180 Watt (CW, SSB)
• Supply operation: 28V DC at IDQ = 12A (TX)
• Impedance: 50 ohms
• RF connectors: N-female
• Dimensions: 150 mm x 65 mm x 27 mm (with connectors)
• Weight: 0.25 kg
• Assembled in Ukraine

LDMOS Power Amplifier for 23cm - 150 W desired for all modulation types, including WSJT. Ideal for CW, SSB, ATV, SAT, EME WSJT.

PA includes transistor\'s current temperature compensation circuit controlled by gate bias, VSWR and RF Power detectors, PTT control, digital temperature sensor.

The housing is manufactured from aluminum plate by milling on the CNC machine. The transistor is mounted on a copper insert by soldering.

Attention!
This PA should be mounted to the radiator (that is not included to this KIT) that is able to absorb up to 300 watt. Package includes

• 1 x PA-23cm-150W-N-female
• 1 x Mounting screws KIT
• 1 x 7-pin female connector

Please, take a look at our other products.

If you have any questions feel free to contact us.

VHFDesign Hamradio development team

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